PART |
Description |
Maker |
NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb(x8/x16.8/3V28字节页)NAND闪存以及256/512Mb(x16/x32.8V的)LPSDRAM的MCP
|
意法半导 STMicroelectronics N.V.
|
K521F12ACD-B060 |
1Gb (128M x8) NAND Flash 512Mb (32M x16) Mobile DDR SDRAM
|
Samsung
|
HYS72D128521GR-7-B HYS72D64500GR-8-B HYS72D128520G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank DDR SDRAM Modules - 1GB (128Mx72) PC2100 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank 256 MB 32M x 72 PC2100 Registered DIM... DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-2-2 2-bank Registered DDR SDRAM-Modules Low Profile Registered DDR-I SDRAM-Modules
|
INFINEON[Infineon Technologies AG]
|
IS43DR86400B |
512Mb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
IS43DR81280A IS43DR16640A-3DBL 46DR16640A 46DR8128 |
1Gb (x8, x16) DDR2 SDRAM Clock frequency up to 400MHz
|
Integrated Silicon Solution, Inc Integrated Silicon Solu...
|
IDT72V8980 IDT72V8980DB IDT72V8980J IDT72V8980PV I |
From old datasheet system 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256 256 x 256 TSI, 8 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology IDT
|
IDT72V8985 IDT72V8985DB IDT72V8985J IDT72V8985PV I |
From old datasheet system 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256 256 x 256 TSI, 8 I/O at 2Mbps, Variable/Constant Delay, 3.3V
|
Integrated Device Technology IDT
|
M30L0R8000B0ZAQ M30L0R8000B0ZAQE M30L0R8000B0ZAQF |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
ST Microelectronics
|
M58LR128KC765 M58LR128KD |
128 or 256 Mbit (x16, mux I/O, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
W3EG7264S-AD4 |
512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL 512MB 2x32Mx72的DDR ECC的内存缓冲瓦锁相
|
Optrex America, Inc.
|
WV3EG265M72EFSU262D4S WV3EG265M72EFSU265D4SG |
1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA 1GB 2x64Mx72 DDR内存,无缓冲,锁相环,FBGA封装
|
Square D by Schneider Electric Diodes, Inc.
|